0.18 μm CMOS logic technology with dual gate oxide and low-k interconnect for high-performance and low-power applications
This paper describes a leading-edge 0.18 /spl mu/m CMOS logic foundry technology. Very aggressive design rules and borderless contacts render a 4.4 /spl mu/m/sup 2/ embedded (synchronous cache) 6T SRAM cell demonstrated in a 1 Mb vehicle with very high yield. Robust dual-gate oxides were developed to support 1.5-2 V core logic as well as 3.3 V periphery (I/O) circuitry. Advanced modular core device technology using 32 /spl Aring/ oxides for 1.8-2 V operation and 27 /spl Aring/ oxides for 1.5-1.7 V applications support competitive high-performance (MPU/graphics) or low-standby power (mobile) applications. Transient-enhanced diffusion is effectively used in I/O devices to enhance hot-carrier lifetime. This is the first 0.18 /spl mu/m technology demonstrating a highly manufacturable 6 to 7 level low-k (HSQ)/AlCu interconnect system with tightest metal pitch (0.46 /spl mu/m M1 and 0.56 /spl mu/m at intermediate levels), as well as aggressive borderless and fully stacked vias without poisoning problems. AlCu/FSG and dual-damascene Cu/oxide interconnect options have also been proven with comparable SRAM yield to the AlCu/HSQ system. authors: C.H. Diaz, K.L. Young, J.H. Hsu, J.C.H. Lin, C.S. Hou, C.T. Lin, J.J. Liaw, C.C. Wu, C.W. Su, C.H. Wang, J.K. Ting, S.S. Yang, K.Y. Lee, S.Y. Wu, C.C. Tsai, H.J. Tao, S.M. Jang, S.L. Shue, H.C. Hsieh, Y.Y. Wang, C.C. Chen, S.C. Yang, S. Fu, S.Z. Chang, T.C. Lo, J.Y. Wu, J.S. Shy, C.W. Liu, S.H. Chen, B.L. Lin
Logic
Transistor Structure
TSMC CMOS logic technology relied on planar transistor structures until 2014, when FinFETs were introduced into production with our 16nm technology. The FinFET structure resolved a fundamental limitation of planar device scaling, namely the poor electrostatic control of the channel at short gate lengths. FinFETs also enabled a partial decoupling of the transistor density scaling from device effective width scaling, which is an important feature for attaining increased transistor current per unit footprint of transistors. These FinFET characteristics enabled significant reduction of the power supply voltage as compared to planar transistors. FinFET also presents new degrees of freedom for power performance optimization, which contributed to significant enhancements in energy efficiency from 16nm to our most recently introduced 5nm technology node.
TSMC research and development continues to explore next-generation structures such as stacked nanowires or stacked nanosheets in our quest for new heights in computing performance and energy efficiency for future technology nodes.
