5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021um2 SRAM cells for Mobile SoC and High Performance Computing Applications
A leading edge 5nm CMOS platform technology has been defined and optimized for mobile and HPC applications. This industry-leading 5nm technology features, for the first time, full-fledged EUV, and high mobility channel (HMC) finFETs with densest 0.021μm 2 HD SRAM. This true 5nm CMOS platform technology is a full node scaling from our successful 7nm node [4] in offering ~1.84x logic density, 15% speed gain or 30% power reduction. The 5nm platform technology successfully passed qualification [3] with consistently high yielding 256Mb HD/HC SRAM, and large logic test chip consisting of CPU/GPU/SoC blocks. Currently in risk production, this true 5nm platform technology is on schedule for high volume production in 1H 2020. authors: Geoffrey Yeap, S. S. Lin, Y. M. Chen, H. L. Shang, P. W. Wang, H. C. Lin, Y. C. Peng, J. Y. Sheu, M. Wang, X. Chen, B. R. Yang, C. P. Lin, F. C. Yang, Y. K. Leung, D. W. Lin, C. P. Chen, K. F. Yu, D. H. Chen, C. Y. Chang, H. K. Chen, P. Hung, C. S. Hou, Y. K. Cheng, J. Chang, L. Yuan, C. K. Lin, C. C. Chen, Y. C. Yeo, M. H. Tsai, H. T. Lin
Logic
Logic
TSMC has been at the forefront of advanced CMOS logic technologies for which dense transistors are one of the two essential building blocks, the other being dense interconnect stacks. The intrinsic computing capability of a given logic technology is directly related to the number of interconnected transistors and their switching speed under representative loads originating from both the transistor or gates being driven and the related interconnect resistive and capacitive circuit loads.
TSMC research and development is continuously exploring novel and scalable transistor concepts to ensure sustainable, cost-effective, leading-edge logic technology performance and energy efficiency. We invite you to explore some of TSMC research areas in transistor structure, high-mobility channel, and low-dimensional materials and devices.
