Foundry technology for 130nm and beyond SoC
Current foundry technology menus are so rich that they are sufficient to provide single chip solutions to a wide variety of desktop, portable and communication systems. At 130-nm and 90-nm generations, many of the device characteristics are no longer a straightforward extension of past generations. Special attention should be made for mixed-signal chip design. A judicious choice of devices and careful trade-off between version options should be made to maximize the benefit from the latest foundry offerings. authors: D.D. Tang, C.H. Diaz, C.P. Chao, Humning Hsu, C.Y. Lee, C.S. Chang, Y.T. Chia, M.T. Yang, J.Y.C. Sun
Logic
High Mobility Channel
Silicon has been the transistor channel material of choice throughout all CMOS technology generations up until our 7nm node. TSMC’s 5nm technology is the first advanced logic production technology featuring SiGe as the channel material for p-type FinFET.
TSMC is actively exploring alternative transistor channel materials as an additional degree of freedom in the design of high performance and low power devices. Silicon-germanium and germanium are examples of TSMC’s exploratory research work, which has been extensively published and in some cases recognized as highlights in international conferences.
